temperature of each chip may not exceed 80°C, what is the maximum allowable power per chip? What is the maximum allowable power if a turbulence promoter is used to trip the boundary layer at the leading edge?
An array of 10 silicon chips, each of length L=10 mm on a side, is insulated on one surface and cooled on the opposite surface by atmospheric air in parallel flow with T∞=24°C and u∞=40m/s. When in use, the same electrical power is dissipated in each chip, maintaining a uniform heat flux over the entire cooled surface. If the temperature of each chip may not exceed 80°C, what is the maximum allowable power per chip? What is the maximum allowable power if a turbulence promoter is used to trip the boundary layer at the leading edge?